t4 - lds -0 168 , rev . 3 (1 2 0776 ) ?201 2 microsemi corporation page 1 of 5 1n580 7, 1n5809 and 1n58 11 available on commercial versions void -less hermetically sealed ultrafast recovery glass rectifiers qualified per mil -prf- 19500/477 qualified levels : jan, jantx, jantxv and jans description this ultrafast recovery rectifier diode series is military qualified and is i deal for high - reliability applications where a failure cannot be tolerated. the industry - recognized 6.0 a mp rated rectifiers with working peak reverse voltage s fr om 50 to 150 volts are hermetically sealed with void - less glass construction using an internal category 1 metallurgical bond. these devices are available in both leaded and surface mount melf package configurations. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recov ery time requirements including standard, fast and ultrafast device types in both through - hole and surface mount packages. b package also available in : b melf package (surface mount) 1n580 7 , 0 9 , 11 us & urs important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n5 80 7 , 1n580 9 , 1n58 11 series . ? v oid - less hermetically sealed glass package . ? quadruple - layer passivation. ? extremely robust construction. ? internal category 1 metallurgical bond s. ? jan, jantx, jantxv and jans qualifi cations are availble pe r mil - prf - 19500/477 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? ultrafast recovery 6 amp rectifier series from 50 to 150 v. ? military, s pace and other high - reliability applications. ? switching power supplies or other applications requiring extremely fast switching & lo w forward loss. ? high forward surge current capability. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +175 o c thermal resistance junction - to - lead (l = .37 5 in) fig. 1 r ? jl 22 o c /w thermal resist ance r ? jx 52 o c /w working peak reverse voltage: 1n580 7 1n580 9 1n5811 v rw m 50 100 150 v forward surge current (3) i fsm 12 5 a average rectified output current @ t l = +75 o c at 3/8 inch lead length (1) i o1 6.0 a average rectified output - current @ t a = + 5 5 o c at 3/8 inch lead length (2) i o2 3. 0 a capacitance @ v r = 10 v, f = 1 mhz; vsig = 50 mv (p - p) c j 60 pf reverse recovery time (4) t rr 30 ns solder temperature @ 10 s t sp 260 o c notes : 1. i o1 is rated at t l = 75 o c at 3/8 inch lead length. derate at 60 ma/ o c for t l above 75 o c. 2. i o2 is de rated at 25 ma /oc above t a = 55 o c for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(ma x) 175 o c is not exceeded. 3. t a = 25 o c @ i o = 3 .0 a and v rwm for ten 8.3 ms surges at 1 minute intervals. 4. i f = 1.0 a, i rm = 1.0 a, i r(rec) = . 0.10 a and di/dt = 100 a/ s min . downloaded from: http:///
t4 - lds -0 168 , rev . 3 (1 2 0776 ) ?201 2 microsemi corporation page 2 of 5 1n580 7, 1n5809 and 1n58 11 mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? terminal s: tin/ l ead (sn/pb) or rohs compliant matte/ t in (commercial grade only) over ni ckel plate over c opper. ? marking: body coated in blue with part number . ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 296. consult factory for qua ntities. ? w eight: 75 0 milligrams. ? see p ackage d imensions on last page. part nomenclature jan 1n 580 7 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant jedec type number (see electrical characteristics table) symbols & definitions symbol de finition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range . i o average rectified output current: output c urrent a veraged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle . v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent . i r maximum leakage current: the maximum leakage current that will flow at the specified voltage and t emperature . c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage . t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified recovery decay point after a peak reverse cur rent occurs. electrical characteristics @ t a = 25 oc unless otherwise stated breakdown voltage ( min.) @ 100 a v (br) maximum forward voltage @ 4 a ( 8.3 ms pulse ) v fm reverse current (max.) @ v rwm i r surge current (max) i fsm (note 1) reverse recovery time (max) t rr (note 2) type volts volts a amps ns 25 o c 125 o c 25 o c 125 o c 1n58 07 60 0.875 0.800 5 525 125 30 1n5809 110 0.875 0.800 5 525 125 30 1n5811 160 0.875 0.800 5 525 125 30 notes: 1. t a = 25 o c @ i o = 3 .0 a and v rwm for ten 8.3 ms surges at 1 minute intervals. 2. i f = 1.0 a, i rm = 1.0 a, i r(rec) = 0.10 a and di/dt = 100 a/ s min . downloaded from: http:///
t4 - lds -0 168 , rev . 3 (1 2 0776 ) ?201 2 microsemi corporation page 3 of 5 1n580 7, 1n5809 and 1n58 11 graphs heating time (sec) figure 1 maximum thermal impedance i o (a) figure 2 rectifier p ower vs i o (a verage f orward c urrent) theta ( o c/w ) p o (w) downloaded from: http:///
t4 - lds -0 168 , rev . 3 (1 2 0776 ) ?201 2 microsemi corporation page 4 of 5 1n580 7, 1n5809 and 1n58 11 graphs (continued) pad area per pad ( sq in) figure 3 thermal r esistance vs fr4 p ad a rea a t a mb ient pcb horizontal (for each pad) with 1, 2, and 3 oz copper v f (v) figure 4 forward v oltage vs f orward c urrent i f (v) thermal resistance ( o c/w ) downloaded from: http:///
t4 - lds -0 168 , rev . 3 (1 2 0776 ) ?201 2 microsemi corporation page 5 of 5 1n580 7, 1n5809 and 1n58 11 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimension bl shall includ e the entire body including slugs and sections of the lead over which the diameter is uncontrolled. this uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. dimension bd shall be me asured at the largest diameter . 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters notes min max min max bd .115 .142 2.92 3.61 4 bl .130 .300 3.30 7.62 3 ld 0.036 .042 0.91 1.07 3 ll .900 1.30 22.86 33.02 lead tolerance = +.002 - .003 in. ( inc lud es sections of the lead or fillet over which the lead diameter is uncontrolled. ) downloaded from: http:///
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